BCR135T datasheet(3/10 Pages) INFINEON

Part #	BCR135T

Description	NPN Silicon Digital Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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3 / 10 page

May-17-2004

3

BCR135.../SEMH9

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 100 µA, IB = 0

V(BR)CEO

50

-

V

Collector-base breakdown voltage

IC = 10 µA, IE = 0

V(BR)CBO

50

-

Collector-base cutoff current

VCB = 40 V, IE = 0

ICBO

-

100

nA

Emitter-base cutoff current

VEB = 6 V, IC = 0

IEBO

-

167

µA

DC current gain1)

IC = 5 mA, VCE = 5 V

hFE

70

-

Collector-emitter saturation voltage1)

IC = 10 mA, IB = 0.5 mA

VCEsat

-

0.3

V

Input off voltage

IC = 100 µA, VCE = 5 V

Vi(off)

0.5

-

1

Input on voltage

IC = 2 mA, VCE = 0.3 V

Vi(on)

0.5

-

1.4

Input resistor

R1

7

10

13

k

Ω

Resistor ratio

R1/R2

0.19

0.21

0.24

-

AC Characteristics

Transition frequency

IC = 10 mA, VCE = 5 V, f = 100 MHz

fT

-

150

-

MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Ccb

-

3

-

pF

1Pulse test: t < 300µs; D < 2%

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