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BCR199L3 Datasheet(PDF) 2 Page - Infineon Technologies AG |
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BCR199L3 Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 6 page Aug-29-2003 2 BCR199... Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) BCR199F BCR199L3 BCR199T RthJS ≤ 90 ≤ 60 ≤ 165 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 V(BR)CEO 50 - - V Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO 50 - - Emitter-base breakdown voltage IE = 10 µA, IC = 0 V(BR)EBO 5 - - Collector-base cutoff current VCB = 40 V, IE = 0 ICBO - - 100 nA DC current gain2) IC = 5 mA, VCE = 5 V hFE 120 - 630 - Collector-emitter saturation voltage2) IC = 10 mA, IB = 0.5 mA VCEsat - - 0.3 V Input off voltage IC = 100 µA, VCE = 5 V Vi(off) 0.4 - 0.8 Input on voltage IC = 2 mA, VCE = 0.3 V Vi(on) 0.5 - 1.5 Input resistor R1 32 47 62 k Ω AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz fT - 200 - MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb - 3 - - 1For calculation of RthJA please refer to Application Note Thermal Resistance 2Pulse test: t < 300µs; D < 2% |
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