BF998R datasheet(3/6 Pages) INFINEON

Part #	BF998R

Description	Silicon N-Channel MOSFET Tetrode

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Manufacturer	INFINEON [Infineon Technologies AG]

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3 / 6 page

Feb-13-2004

3

BF998...

Electrical Characteristics

Parameter

Symbol

Values

Unit

min.

typ.

max.

AC Characteristics

Forward transconductance

VDS = 8 V, ID = 10 mA, VG2S = 4 V

gfs

20

24

-

Gate1 input capacitance

VDS = 8 V, ID = 10 mA, VG2S = 4 V,

f

= 1 MHz

Cg1ss

-

2.1

2.5

pF

Gate 2 input capacitance

VDS = 8 V, ID = 10 mA, VG2S = 4 V,

f

= 1 MHz

Cg2ss

-

1.2

-

pF

Feedback capacitance

VDS = 8 V, ID = 10 mA, VG2S = 4 V,

f

= 1 MHz

Cdg1

-

25

-

fF

Output capacitance

VDS = 8 V, ID = 10 mA, VG2S = 4 V,

f

= 1 MHz

Cdss

-

1.1

-

pF

Power gain

VDS = 8 V, ID = 10 mA, VG2S = 4 V,

f

= 45 MHz

VDS = 8 V, ID = 10 mA, VG2S = 4 V,

f

= 800 MHz

Gp

-

28

20

-

dB

Noise figure

VDS = 8 V, ID = 10 mA, VG2S = 4 V,

f

= 45 MHz

VDS = 8 V, ID = 10 mA, VG2S = 4 V,

f

= 800 MHz

F

-

2.8

1.8

-

dB

Gain control range

VDS = 8 V, VG2S = 4 ...-2 V, f = 800 MHz

∆Gp

40

50

-

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