BFR181W datasheet(1/7 Pages) INFINEON

Part #	BFR181W

Description	NPN Silicon RF Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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BFR181W

Jun-27-2001

1

NPN Silicon RF Transistor

For low noise, high-gain broadband amplifiers at

collector currents from 0.5 mA to 12 mA

fT = 8 GHz

F = 1.45 dB at 900 MHz

1

3

VSO05561

2

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

BFR181W

RFs

1 = B

2 = E

3 = C

SOT323

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

VCEO

12

V

Collector-emitter voltage

VCES

20

Collector-base voltage

VCBO

20

Emitter-base voltage

VEBO

2

Collector current

IC

20

mA

Base current

IB

2

Total power dissipation

TS

90 °C 1)

Ptot

175

mW

Junction temperature

Tj

150

°C

Ambient temperature

TA

-65 ... 150

Storage temperature

Tstg

-65 ... 150

Thermal Resistance

Junction - soldering point2)

RthJS

345

K/W

1TS is measured on the collector lead at the soldering point to the pcb

2For calculation of RthJA please refer to Application Note Thermal Resistance

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