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BFY182ES Datasheet(PDF) 3 Page - Infineon Technologies AG |
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BFY182ES Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 5 page BFY182 Semiconductor Group 3 of 5 Draft B, September 1999 Electrical Characteristics (continued) Parameter Symbol Values Unit min. typ. max. DC Characteristics Base-Emitter forward voltage IE = 20 mA, IC = 0 VFBE -- 1 V DC current gain IC = 5 mA, VCE = 6 V hFE 55 100 170 - AC Characteristics Transition frequency IC = 15 mA, VCE = 5 V, f = 500 MHz IC = 15 mA, VCE = 8 V, f = 500 MHz fT 6.5 - 7.5 8 - - GHz Collector-base capacitance VCB = 10 V, VBE = vbe = 0, f = 1 MHz CCB - 0.26 0.36 pF Collector-emitter capacitance VCE = 10 V, VBE = vbe = 0, f = 1 MHz CCE -0.34 - pF Emitter-base capacitance VEB = 0.5V, VCB = vcb = 0, f = 1 MHz CEB -0.8 1.1 pF Noise Figure IC = 5 mA, VCE = 5 V, f = 2 GHz, ZS = ZSopt F - 2.4 2.9 dB Power gain IC = 15 mA, VCE = 5V, f = 2 GHz ZS = ZSopt , ZL= ZLopt Gma 1.) 13.5 14.5 - dB Transducer gain IC = 15 mA, VCE = 5 V, f = 2 GHz ZS = ZL = 50 Ω |S21e| 2 10 11 - dB Notes.: 1) G S S kk ma =− − 21 12 1 2 () , G S S ms = 21 12 |
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