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BFY196P Datasheet(PDF) 3 Page - Infineon Technologies AG |
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BFY196P Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 5 page BFY196 Semiconductor Group 3 of 5 Draft B, September 99 Electrical Characteristics (continued) Parameter Symbol Values Unit min. typ. max. DC Characteristics Base-Emitter forward voltage IE = 50 mA, IC = 0 VFBE -- 1 V DC current gain IC = 50 mA, VCE = 8 V hFE 50 100 175 - AC Characteristics Transition frequency IC = 70 mA, VCE = 5 V, f = 500 MHz fT 66.5 - GHz Collector-base capacitance VCB = 10 V, VBE = vbe = 0, f = 1 MHz CCB -1 1.3 pF Collector-emitter capacitance VCE = 10 V, VBE = vbe = 0, f = 1 MHz CCE -0.44 - pF Emitter-base capacitance VEB = 0.5V, VCB = vcb = 0, f = 1 MHz CEB -3,6 4,3 pF Noise Figure IC = 20 mA, VCE = 5 V, f = 2 GHz, ZS = ZSopt F- 3 3.5 dB Power gain IC = 70 mA, VCE = 5V, f = 2 GHz ZS = ZSopt , ZL= ZLopt Gma 1.) 10 11 - dB Transducer gain IC = 70 mA, VCE = 5 V, f = 2 GHz ZS = ZL = 50 Ω |S21e| 2 45 - dB Output Power IC = 80 mA, VCE = 5 V, f = 2 GHz , PIN=15 dBm, ZS = ZL = 50 Ω POUT 18.5 19.5 - dBm Notes.: 1) G S S kk ma =− − 21 12 1 2 () , G S S ms = 21 12 |
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