BFY196P datasheet(3/5 Pages) INFINEON

Part #	BFY196P

Description	HiRel NPN Silicon RF Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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3 / 5 page

BFY196

Semiconductor Group

3 of 5

Draft B, September 99

Electrical Characteristics (continued)

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Base-Emitter forward voltage

IE = 50 mA, IC = 0

VFBE

--

1

V

DC current gain

IC = 50 mA, VCE = 8 V

hFE

50

100

175

-

AC Characteristics

Transition frequency

IC = 70 mA, VCE = 5 V, f = 500 MHz

fT

66.5

-

GHz

Collector-base capacitance

VCB = 10 V, VBE = vbe = 0, f = 1 MHz

CCB

-1

1.3

pF

Collector-emitter capacitance

VCE = 10 V, VBE = vbe = 0, f = 1 MHz

CCE

-0.44

-

pF

Emitter-base capacitance

VEB = 0.5V, VCB = vcb = 0, f = 1 MHz

CEB

-3,6

4,3

pF

Noise Figure

IC = 20 mA, VCE = 5 V, f = 2 GHz,

ZS = ZSopt

F-

3

3.5

dB

Power gain

IC = 70 mA, VCE = 5V, f = 2 GHz

ZS = ZSopt , ZL= ZLopt

Gma

1.)

10

11

-

dB

Transducer gain

IC = 70 mA, VCE = 5 V, f = 2 GHz

ZS = ZL = 50

Ω

|S21e|

2

45

-

dB

Output Power

IC = 80 mA, VCE = 5 V, f = 2 GHz ,

PIN=15 dBm, ZS = ZL = 50

Ω

POUT

18.5

19.5

-

dBm

Notes.:

1)

G

S

kk

ma =−

−

21

12

1

2

() ,

G

S

ms =

21

12

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