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TS3310ITD1022 Datasheet(PDF) 3 Page - Silicon Laboratories |
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TS3310ITD1022 Datasheet(HTML) 3 Page - Silicon Laboratories |
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3 / 20 page  TS3310 TS3310 Rev. 1.1 Page 3 ELECTRICAL CHARACTERISTICS VIN=1.2V, VOUT_ON=VIN, VPROG is the programmed voltage according to S2, S1, S0 pins set for STORE voltage of 3V unless otherwise specified. TA=-40°C to 85°C. Typical values are at TA=+25°C unless otherwise specified. Please see Note 1. PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Input Voltage Range VIN 0.9 5 V Under Voltage Lock Out UVLO 0.855 0.9 V Hysteresis 20 mV STORE Voltage VSTORE ISTORE=50% of ISTORE(MAX), 0.9V<VIN<3.6V, at any VPROG>VIN. TA=+25°C. See Note 2. 0.97 x VPROG VPROG 1.03 x VPROG V VPROG Tempco 0.027 % / °C No-Load Input Current, IQ I-Floor @ IN. See Note 3. 90 180 nA @ STORE. See Note 3. 30 Active-Mode @ IN. See Note 4. 150 Boost Switch On-Time TON VIN=1.8V 0.8 x 2/VIN 2/VIN 1.2 x 2/VIN µsec On Resistance NMOS RON NMOS VSTORE=1.8V 0.8 1.3 Ω PMOS RON PMOS 1.1 1.65 LOAD SWITCH RON LOAD SWITCH 1.1 1.65 NMOS RON NMOS VSTORE=3V 500 mΩ PMOS RON PMOS 650 LOAD SWITCH RON LOAD SWITCH 650 VSTORE GOOD VVGOOD % of target STORE voltage 80 90 95 % Hysteresis 5 VOUT_ON Input Voltage VOUT_ON L Low CMOS Logic Level 0.2 V VOUT_ON H High CMOS Logic Level 0.6 S0, S1, S2 Input Voltage S0L, S1L, S2L Low CMOS Logic Level 0.2 V S0H, S1H, S2H High CMOS Logic Level 0.6 S0, S1, S2, OUT_ON Input Leakage Current 5 nA Note 1: All devices are 100% production tested at TA = +25°C and are guaranteed by characterization for TA = -40°C to +85°C, as specified. Note 2: ISTORE(MAX) is provided as the Maximum Average STORE Current by the graph entitled “Expected Maximum STORE Output Current” in the TS3310 Applications Section. Note 3: VSTORE output is driven above regulation point. No switching is occurring. Note 4: VSTORE=3V. L=100µH. CSTORE=1µF. |
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