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DF10G6M4N Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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DF10G6M4N Datasheet(HTML) 3 Page - Toshiba Semiconductor |
3 / 8 page DF10G6M4N 2015-09-29 3 Characteristics Curves (Note) 0 0.1 0.2 0.3 0.4 0.5 1000 10000 Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 0 0.1 0.2 0.3 0.4 0.5 0 1 2 3 4 5 6 Ta=25℃, f = 1MHz Reverse voltage VR (V) VR=0V, Ta=25℃ Frequency f (MHz) Ct - VR Ct - f IR - VR I - V Reverse voltage VR (V) Ta=25℃ Voltage V (V) → -10 -8 -6 -4 -2 0 2 4 6 8 10 -10 -8 -6 -4 -2 0 2 4 6 8 10 Voltage V (V) → Ta=25℃ Ta=100℃ 25℃ 50℃ 75℃ |
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