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DF10G6M4N Datasheet(PDF) 3 Page - Toshiba Semiconductor

Part # DF10G6M4N
Description  This product is designed for protection against electrostatic discharge and is not intended for any other purpose, including, but not limited to, voltage regulation.
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

DF10G6M4N Datasheet(HTML) 3 Page - Toshiba Semiconductor

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DF10G6M4N
2015-09-29
3
Characteristics Curves (Note)
0
0.1
0.2
0.3
0.4
0.5
1000
10000
Note: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
0
0.1
0.2
0.3
0.4
0.5
0
1
2
3
4
5
6
Ta=25℃, f = 1MHz
Reverse voltage VR (V)
VR=0V, Ta=25℃
Frequency f (MHz)
Ct - VR
Ct - f
IR - VR
I - V
Reverse voltage VR (V)
Ta=25℃
Voltage V
(V) →
-10
-8
-6
-4
-2
0
2
4
6
8
10
-10 -8
-6 -4
-2
0
2
4
6
8
10
Voltage V (V) →
Ta=25℃
Ta=100℃
25℃
50℃
75℃


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