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BSO615 Datasheet(PDF) 9 Page - Infineon Technologies AG

Part # BSO615
Description  SIPMOS Small-Signal-Transistor
Download  13 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BSO615 Datasheet(HTML) 9 Page - Infineon Technologies AG

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1999-10-28
Page 9
Preliminary data
BSO 615 C
Drain-source on-resistance (N-Ch.)
RDS(on) = f (Tj)
parameter :
ID = 3.1 A , VGS = 10 V
-60
-20
20
60
100
°C
180
Tj
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
0.22
0.24
Ω
0.30
BSO 615 C
typ
98%
Drain-source on-resistance (P-Ch.)
RDS(on) = f (Tj)
parameter :
ID = -2 A , VGS = -10 V
-60
-20
20
60
100
°C
180
Tj
0.00
0.10
0.20
0.30
0.40
0.50
0.60
Ω
0.80
BSO 615 C
typ
98%
Gate threshold voltage (N-Ch.)
VGS(th) = f (Tj)
parameter:
VGS = VDS, ID = 20 µA
-60
-20
20
60
100
°C
160
Tj
0.0
0.2
0.5
0.8
1.0
1.2
1.5
1.8
2.0
2.2
2.5
V
3.0
2%
-60
-20
20
60
100
°C
160
Tj
0.0
0.2
0.5
0.8
1.0
1.2
1.5
1.8
2.0
2.2
2.5
V
3.0
typ
-60
-20
20
60
100
°C
160
Tj
0.0
0.2
0.5
0.8
1.0
1.2
1.5
1.8
2.0
2.2
2.5
V
3.0
98%
-60
-20
20
60
100
°C
160
Tj
0.0
0.2
0.5
0.8
1.0
1.2
1.5
1.8
2.0
2.2
2.5
V
3.0
Gate threshold voltage (P-Ch.)
VGS(th) = f (Tj)
parameter:
VGS = VDS, ID = -450 µA
-60
-20
20
60
100
°C
160
Tj
0.0
-0.2
-0.5
-0.8
-1.0
-1.2
-1.5
-1.8
-2.0
-2.2
-2.5
V
-3.0
2%
-60
-20
20
60
100
°C
160
Tj
0.0
-0.2
-0.5
-0.8
-1.0
-1.2
-1.5
-1.8
-2.0
-2.2
-2.5
V
-3.0
typ
-60
-20
20
60
100
°C
160
Tj
0.0
-0.2
-0.5
-0.8
-1.0
-1.2
-1.5
-1.8
-2.0
-2.2
-2.5
V
-3.0
98%
-60
-20
20
60
100
°C
160
Tj
0.0
-0.2
-0.5
-0.8
-1.0
-1.2
-1.5
-1.8
-2.0
-2.2
-2.5
V
-3.0


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