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BSP135 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BSP135 Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 9 page  BSP135 SIPMOS ® Small-Signal-Transistor Features • N-channel • Depletion mode • dv /dt rated Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T A=25 °C 0.12 A T A=70 °C 0.10 Pulsed drain current I D,pulse T A=25 °C 0.48 Reverse diode dv /dt dv /dt I D=0.12 A, V DS=20 V, di /dt =200 A/µs, T j,max=150 °C 6 kV/µs Gate source voltage V GS ±20 V ESD sensitivity (HBM) as per MIL-STD 883 Class 1 Power dissipation P tot T A=25 °C 1.8 W Operating and storage temperature T j, T stg -55 ... 150 °C IEC climatic category; DIN IEC 68-1 55/150/56 Value V DS 600 V R DS(on),max 60 Ω I DSS,min 0.02 A Product Summary Type Package Ordering Code Tape and Reel Information Marking BSP135 SOT-223 Q62702-S655 E6327: 1000 pcs/reel BSP135 SOT-223 Rev. 1.0 page 1 2003-04-03 |
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