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ACST310-8BTR Datasheet(PDF) 2 Page - STMicroelectronics |
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ACST310-8BTR Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 14 page Characteristics ACST310-8B 2/14 DocID027784 Rev 1 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Test conditions Value Unit IT(RMS) On-state RMS current (full sine wave) Tc = 112 °C 3 A ITSM Non repetitive surge peak on-state current (Tj initial = 25 °C) f = 50 Hz tp = 20 ms 20 A f = 60 Hz tp = 16.7 ms 21 I2tI2t value for fusing tp = 10 ms 2.6 A²s dI/dt Critical rate of rise of on-state current IG = 2 x IGT, tr = 100 ns f = 120 Hz TJ = 125 °C 50 A/µs VPP (1) Non repetitive line peak mains voltage TJ = 25 °C 2 kV PG(AV) Average gate power dissipation TJ = 125°C 0.1 W PGM Peak gate power tp = 20 µs TJ = 125 °C 10 W IGM Peak gate current tp = 20 µs TJ = 125°C 1.6 A Tstg Storage junction temperature range -40 to +150 °C Tj Operating junction temperature range -40 to +125 °C TL Maximum lead temperature for soldering during 10 s 260 °C 1. according to test described by standard IEC 61000-4-5 standard (see Figure 16). Table 3. Electrical characteristics Symbol Test conditions Quadrant Tj Value Unit IGT(1) VOUT = 12 V, RL = 33 Ω I - II - III 25 °C Max. 10 mA VGT Max. 1.1 V VGD VOUT = VDRM, RL = 3.3 kΩ I - II - III 125 °C Min. 0.2 V IH(2) IOUT = 100 mA 25 °C Max. 20 mA IL IG = 1.2 x IGT I - III 25 °C Max. 25 mA II 35 dV/dt(2) VOUT = 67% VDRM, gate open 125 °C Min. 1000 V/µs (dI/dt)c(2) (dV/dt)c = 0.1V/µs 125 °C Min. 5 A/ms (dI/dt)c(2) (dV/dt)c = 10 V/µs 125 °C Min. 1 A/ms VCL ICL = 0.1 mA, tp = 1 ms 25 °C Min. 850 V 1. Minimum IGT is guaranteed at 5% of IGT max. 2. For both polarities of OUT pin referenced to COM pin |
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