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STW28N60DM2 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STW28N60DM2
Description  Extremely low gate charge and input capacitance
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW28N60DM2 Datasheet(HTML) 1 Page - STMicroelectronics

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December 2015
DocID027040 Rev 4
1/20
This is information on a product in full production.
www.st.com
STB28N60DM2, STP28N60DM2,
STW28N60DM2
N-channel 600 V, 0.13
Ω typ., 21 A MDmesh™ DM2
Power MOSFETs in D²PAK, TO-220 and TO-247 packages
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
VDS @
TJmax.
RDS(on)
max.
ID
PTOT
STB28N60DM2
600 V
0.16 Ω
21 A
170 W
STP28N60DM2
STW28N60DM2
Fast-recovery body diode
Extremely low gate charge and input
capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications
Description
These high voltage N-channel Power MOSFETs
are part of the MDmesh™ DM2 fast recovery
diode series. They offer very low recovery charge
(Qrr) and time (trr) combined with low RDS(on),
rendering them suitable for the most demanding
high efficiency converters and ideal for bridge
topologies and ZVS phase-shift converters.
Table 1: Device summary
Order code
Marking
Package
Packing
STB28N60DM2
28N60DM2
D²PAK
Tape and reel
STP28N60DM2
TO-220
Tube
STW28N60DM2
TO-247
Tube


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