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STP45N60DM2AG Datasheet(PDF) 3 Page - STMicroelectronics

Part # STP45N60DM2AG
Description  Extremely high dv/dt ruggedness
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP45N60DM2AG Datasheet(HTML) 3 Page - STMicroelectronics

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STP45N60DM2AG
Electrical ratings
DocID028065 Rev 1
3/13
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VGS
Gate-source voltage
±25
V
ID
Drain current (continuous) at Tcase = 25 °C
34
A
Drain current (continuous) at TcasePCB = 100 °C
21
IDM
(1)
Drain current (pulsed)
136
A
PTOT
Total dissipation at Tcase = 25 °C
250
W
dv/dt
(2)
Peak diode recovery voltage slope
50
V/ns
dv/dt
(3)
MOSFET dv/dt ruggedness
50
Tstg
Storage temperature
-55 to 150
°C
Tj
Operating junction temperature
Notes:
(1)
Pulse width is limited by safe operating area.
(2)
ISD
≤ 34 A, di/dt=800 A/μs; VDS peak < V(BR)DSS, VDD = 80% V
(BR)DSS.
(3)
VDS
≤ 480 V.
Table 3: Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case
0.50
°C/W
Rthj-amb
Thermal resistance junction-ambient
62.5
Table 4: Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not repetitive
6
A
EAS
(1)
Single pulse avalanche energy
800
mJ
Notes:
(1)
starting Tj = 25 °C, ID = IAR, VDD = 50 V.


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