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ADS8332IBPW Datasheet(PDF) 5 Page - Texas Instruments |
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ADS8332IBPW Datasheet(HTML) 5 Page - Texas Instruments |
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5 / 57 page  ADS8331, ADS8332 www.ti.com SBAS363D – DECEMBER 2009 – REVISED OCTOBER 2015 7 Specifications 7.1 Absolute Maximum Ratings Over operating free-air temperature range, unless otherwise noted. (1) MIN MAX UNIT INX, MUXOUT, ADCIN, REF+ to AGND –0.3 VA + 0.3 COM, REF– to AGND –0.3 0.3 Voltage VA to AGND –0.3 7 V VBD to DGND –0.3 7 AGND to DGND –0.3 0.3 Digital input voltage to DGND –0.3 VBD + 0.3 V Digital output voltage to DGND –0.3 VBD + 0.3 V (TJMax – Power dissipation W 4 × 4 QFN- TA)/RθJA 24 Package RθJA thermal impedance 47 °C/W (TJMax – Power dissipation W TSSOP-24 TA)/θJA Package RθJA thermal impedance 47 °C/W Operating free-air temperature, TA –40 85 °C Junction temperature, TJ Max 150 °C Storage temperature range, Tstg –65 150 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated is not implied. Exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. 7.2 ESD Ratings VALUE UNIT Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V(ESD) Electrostatic discharge V Charged-device model (CDM), per JEDEC specification JESD22- ±500 C101(2) (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 7.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT VA Analog supply voltage 2.7 3 3.6 V VBD Digital supply voltage 1.65 3 VA + 0.2 V 7.4 Thermal Information ADS833x THERMAL METRIC(1) RGE (VQFN) PW (TSSOP) UNIT 24 PINS 24 PINS RθJA Junction-to-ambient thermal resistance 31.9 78.3 °C/W RθJC(top) Junction-to-case (top) thermal resistance 29.2 12.1 °C/W RθJB Junction-to-board thermal resistance 8.7 33.8 °C/W ψJT Junction-to-top characterization parameter 0.3 0.3 °C/W ψJB Junction-to-board characterization parameter 8.7 33.5 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 2.25 NA °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. Copyright © 2009–2015, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Links: ADS8331 ADS8332 |
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