1N5819U02B datasheet(3/10 Pages) STMICROELECTRONICS

Part #	1N5819U02B

Description	Aerospace 45 V power Schottky rectifier

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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1N5819U

Characteristics

10

To evaluate the conduction losses use the following equation:

P = 0.285 x IF(AV) + 0.165 x IF

2

(RMS )

Table 4. Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR

(1)

1.

Pulse test: tp = 5 ms, δ < 2%

Reverse leakage

current

Tj = 25 °C

VR = 45 V

-

20

µA

Tj = 100 °C

-

3.5

mA

Tj = -55 °C

VR = 45 V

-

20

µA

Tj = -55 °C

VR = 40 V

--

10

Tj = 25 °C

VR = 40 V

--

15

Tj = 100 °C

-

3

mA

Tj = 100 °C

VR = 35 V

-

2.5

Tj = 100 °C

VR = 24 V

--

1.6

Tj = 100 °C

VR = 12 V

-

1.2

Tj = 100 °C

VR = 6 V

--

1

VF

(2)

2.

Pulse test: tp = 680 µs, δ < 2%

Forward voltage drop

Tj = 25 °C

IF = 0.1 A

-

350

mV

Tj = 25 °C

IF = 1A

--

490

Tj = 100 °C

-

450

Tj = - 55 °C

-

650

Tj = 25 °C

IF = 3.1 A

-

800

Table 5. Dynamic characteristics

Symbo

l

Parameter

Test conditions

Min

.

Ty

p.

Max

.

Uni

t

Cj

Diode capacitance

VR = 5 V, F = 1 MHz

-

70

pF

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