BTS 307

Semiconductor Group

8

2003-Oct-01

Options Overview

all versions: High-side switch, Input protection, ESD protectionand reverse battery

protection with 150

Ω in GND connection, protection against loss of ground

Type

BTS 410D2 410E2 410G2 410H2

307

308

Logic version

D

E

G

H

Overtemperature protection with hysteresis

Tj >150 °C, latch function

Tj >150 °C, with auto-restart on cooling

X

X

X

X

X

X

Short circuit to GND protection

µs)

X

X

(when first turned on after approx. 150

µs)

Achieved through overtemperature protection

X

X

X

X

Open load detection

in OFF-state with sensing current 6

in ON-state with sensing voltage drop across

power transistor

X

X

X

X

X

X

Undervoltage shutdown with auto restart

X

X

X

X

X

X

Overvoltage shutdown with auto restart

X

X

X

X

-

X

Status feedback for

overtemperature

short circuit to GND

open load

undervoltage

overvoltage

X

X

X

X

X

X

X

-

X

-

-

X

-

X

-

-

X

X

X

X

-

-

X

X

X

X

X

-

X

X

X

X

-

-

Status output type

CMOS

Open drain

X

X

X

X

X

X

Output negative voltage transient limit

(fast inductive load switch off)

X

X

X

X

X

X

Load current limit

X

X

X

X

X

X

Protection against loss of GND

X

X

X

X

X

X

10

)

Latch except when

0 V only if forced externally). So the device remains latched unless

11

)

With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage

12

)