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BTS410F2E3062A Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BTS410F2E3062A Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 15 page PROFET® BTS 410 F2 Semiconductor Group 1 of 15 2003-Oct-01 Smart Highside Power Switch Features • Overload protection • Current limitation • Short circuit protection • Thermal shutdown • Overvoltage protection (including load dump) • Fast demagnetization of inductive loads • Reverse battery protection1) • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Open drain diagnostic output • Open load detection in ON-state • CMOS compatible input • Loss of ground and loss of V bb protection • Electrostatic discharge (ESD) protection Application • µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads • Most suitable for inductive loads • Replaces electromechanical relays, fuses and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. + Vbb IN ST Signal GND ESD PROFET OUT GND Logic Voltage sensor Voltage source Open load detection Short circuit detection Charge pump Level shifter Temperature sensor Rectifier Limit for unclamped ind. loads Gate protection Current limit 2 4 1 3 5 Load GND Load V Logic Overvoltage protection 1 ) With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistors in series with IN and ST connections, reverse load current limited by connected load. Product Summary Overvoltage protection Vbb(AZ) 65 V Operating voltage Vbb(on) 4.7 ... 42 V On-state resistance RON 220 m Ω Load current (ISO) IL(ISO) 1.8 A Current limitation IL(SCr) 2.7 A TO-220AB/5 5 Standard 1 5 Straight leads 1 5 SMD |
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