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BTS441R Datasheet(PDF) 8 Page - Infineon Technologies AG |
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BTS441R Datasheet(HTML) 8 Page - Infineon Technologies AG |
8 / 12 page BTS 441 R Infineon Technologies AG Page 8 2003-Oct-01 GND disconnect with GND pull up PROFET V IN ST OUT GND bb V bb V GND V IN V ST Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND > 0, no VST = low signal available. Vbb disconnect with charged inductive load PROFET V IN ST OUT GND bb V bb high For inductive load currents up to the limits defined by ZL (max. ratings and diagram on page 8) each switch is protected against loss of Vbb. Consider at your PCB layout that in the case of Vbb dis- connection with energized inductive load all the load current flows through the GND connection. Inductive load switch-off energy dissipation PROFET V IN ST OUT GND bb = E E E EAS bb L R ELoad RL L { L Z Energy stored in load inductance: EL = 1/2·L·I 2 L While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= VON(CL)·iL(t) dt, with an approximate solution for RL > 0 Ω: EAS= IL· L 2·RL (Vbb + |VOUT(CL)|) ln (1+ IL·RL |VOUT(CL)| ) Maximum allowable load inductance for a single switch off L = f (IL ); Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω L [mH] 1 10 100 1000 0 5 1015 20 2530 35 0.1 IL [A] |
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