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Q67060-S6202-A6 Datasheet(PDF) 4 Page - Infineon Technologies AG |
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Q67060-S6202-A6 Datasheet(HTML) 4 Page - Infineon Technologies AG |
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4 / 14 page  BTS 432 E2 Parameter and Conditions Symbol Values Unit at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max Semiconductor Group 4 2003-Oct-01 Protection Functions8) Initial peak short circuit current limit (pin 3 to 5)9), ( max 400 µs if VON > VON(SC) ) IL(SCp) Tj =-40°C: Tj =25°C: Tj =+150°C: -- -- 24 -- 44 -- 74 -- -- A Repetitive short circuit current limit IL(SCr) Tj = Tjt (see timing diagrams, page 10) 22 35 -- A Short circuit shutdown delay after input pos. slope VON > VON(SC), Tj =-40..+150°C: min value valid only, if input "low" time exceeds 30 µs td(SC) 80 -- 400 µs Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL), IL= 30 mA VON(CL) -- 58 -- V Short circuit shutdown detection voltage (pin 3 to 5) VON(SC) -- 8.3 -- V Thermal overload trip temperature Tjt 150 -- -- °C Thermal hysteresis ∆T jt -- 10 -- K Inductive load switch-off energy dissipation10), Tj Start = 150 °C, single pulse Vbb = 12 V: Vbb = 24 V: EAS ELoad12 ELoad24 -- -- 1.7 1.3 1.0 J Reverse battery (pin 3 to 1) 11) -Vbb -- -- 32 V Integrated resistor in Vbb line Rbb -- 120 -- Ω Diagnostic Characteristics Open load detection current Tj=-40 °C: (on-condition) Tj=25..150°C: IL (OL) 2 2 -- -- 900 750 mA 8 ) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 9 ) Short circuit current limit for max. duration of 400 µs, prior to shutdown (see td(SC) page 4) 10) While demagnetizing load inductance, dissipated energy in PROFET is EAS= VON(CL) * iL(t) dt, approx. EAS= 1/2 * L * I 2 L * ( VON(CL) VON(CL) - Vbb ), see diagram page 8 11 ) Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Reverse current IGND of ≈ 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under these condition is dependent on the size of the heatsink. Reverse IGND can be reduced by an additional external GND-resistor (150 Ω). Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7). |
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