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DS42MB100TSQ Datasheet(PDF) 4 Page - Texas Instruments |
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DS42MB100TSQ Datasheet(HTML) 4 Page - Texas Instruments |
4 / 25 page DS42MB100 SNLS244H – SEPTEMBER 2006 – REVISED JANUARY 2016 www.ti.com Pin Functions (continued) PIN I/O DESCRIPTION NAME NO. Reserve pin to support factory testing. This pin can be left open, or tied to GND, or tied to GND RSV 17 I through an external pull-down resistor. POWER 2, 8, 9, 12, Ground reference. Each ground pin should be connected to the ground plane through a low GND 14, 16, 20, P inductance path, typically with a via located as close as possible to the landing pad of the GND 29, 35 pin. DAP is the metal contact at the bottom side, located at the center of the WQFN package. It GND DAP P should be connected to the GND plane with at least 16 via to lower the ground impedance and improve the thermal performance of the package. VCC = 3.3 V ± 5%. Each VCC pin should be connected to the VCC plane through a low inductance path, typically with 5, 13, 15, VCC P a via located as close as possible to the landing pad of the VCC pin. 23, 32 It is recommended to have a 0.01 μF or 0.1 μF, X7R, size-0402 bypass capacitor from each VCC pin to ground plane. 6 Specifications 6.1 Absolute Maximum Ratings see (1) (2) MIN MAX UNIT Supply voltage (VCC) –0.3 4 V CMOS/TTL input voltage –0.3 VCC + 0.3 V CML input/output voltage –0.3 VCC + 0.3 V Junction temperature 150 °C Lead temperature (soldering, 4 seconds) 260 °C Storage temperature, Tstg –65 150 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications. 6.2 ESD Ratings VALUE UNIT Human-body model (HBM), 1.5 k Ω, 100 pF, per ANSI/ESDA/JEDEC JS- ±6000 001(1) V(ESD) Electrostatic discharge V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1250 Machine model ±350 (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 4 Submit Documentation Feedback Copyright © 2006–2016, Texas Instruments Incorporated Product Folder Links: DS42MB100 |
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