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BTS660P Datasheet(PDF) 4 Page - Infineon Technologies AG

Part No. BTS660P
Description  Smart Highside High Current Power Switch
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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 4 page
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Data Sheet BTS660P
Infineon Technologies AG
Page 4
2003-Oct-01
Parameter and Conditions
Symbol
Values
Unit
at Tj = -40 ... +150 °C, Vbb = 24 V unless otherwise specified
min
typ
max
Inverse Load Current Operation
On-state resistance (Pins 1,2,6,7 to pin 4)
VbIN = 12 V, IL = - 20 A
Tj = 25 °C:
see diagram on page 10
Tj = 150 °C:
RON(inv)
--
7.2
14.6
9
17
m
Nominal inverse load current (Pins 1,2,6,7 to Tab)
VON = -0.5 V, Tc = 85 °C
IL(inv)
50
60
--
A
Drain-source diode voltage (Vout > Vbb)
IL = - 20 A, IIN = 0, Tj = +150°C
-VON
--
0.6
0.7
mV
Operating Parameters
Operating voltage (VIN = 0)
12)
Vbb(on)
5.0
--
58
V
Under voltage shutdown
13)14)
VbIN(u)
1.5
3.0
4.5
V
Under voltage start of charge pump
see diagram page 15
VbIN(ucp)
3.0
4.5
6.0
V
Over voltage protection
15)
Tj =-40°C:
Ibb = 15 mA
Tj = 25...+150°C:
VbIN(Z)
68
70
--
72
--
--
V
Standby current
Tj =-40...+25°C:
IIN = 0, V
bb=35V
Tj = 150°C:
Ibb(off)
--
--
15
25
25
50
µA
12
)
If the device is turned on before a V
bb-decrease, the operating voltage range is extended down to VbIN(u).
For the voltage range 0..58 V the device is fully protected against overtemperature and short circuit.
13
)
not subject to production test, specified by design
14
)
VbIN = Vbb - VIN see diagram on page 15. When VbIN increases from less than VbIN(u) up to VbIN(ucp) = 5 V
(typ.) the charge pump is not active and VOUT ≈Vbb - 3 V.
15
)
See also VON(CL) in circuit diagram on page 9.




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