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BTS660P Datasheet(PDF) 5 Page - Infineon Technologies AG

Part No. BTS660P
Description  Smart Highside High Current Power Switch
Download  16 Pages
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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 5 page
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Data Sheet BTS660P
Parameter and Conditions
Symbol
Values
Unit
at Tj = -40 ... +150 °C, Vbb = 24 V unless otherwise specified
min
typ
max
Infineon Technologies AG
Page 5
2003-Oct-01
Protection Functions
16)
Short circuit current limit (Tab to pins 1,2,6,7)
VON = 24 V, time until shutdown max. 300
µs
Tc =-40°C:
see page 8 and 13
Tc =25°C:
Tc =+150°C:
IL(SC)
IL(SC)
IL(SC)
--
--
50
90
90
80
180
--
--
A
Short circuit shutdown delay after input current
positive slope, VON > VON(SC) 17)
min. value valid only if input "off-signal" time exceeds 30
µs
td(SC)
80
--
350
µs
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL) (e.g. over voltage)
IL= 40 mA
VON(CL)
62
65
72
V
Short circuit shutdown detection voltage
17)
(pin 4 to pins 1,2,6,7)
VON(SC)
--
6
--
V
Thermal overload trip temperature
Tjt
150
--
--
°C
Thermal hysteresis
T
jt
--
10
--
K
Reverse Battery
Reverse battery voltage
18
)
-Vbb
--
--
42
V
On-state resistance (Pins 1,2,6,7 to pin 4)
Tj = 25°C:
Vbb =-12V, VIN=0, IL=- 20 A, RIS =1 k
Ω Tj = 150°C:
RON(rev)
--
8.8
--
10.5
20
m
Integrated resistor in Vbb line
Tj = 25C:
Tj =150°C:
Rbb
90
105
120
125
135
150
16 ) Integrated protection functions are designed to prevent IC destruction under fault conditions described in
the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions
are not designed for continuous repetitive operation.
17
)
not subject to production test, specified by design
18
)
The reverse load current through the intrinsic drain-source diode has to be limited by the connected load
(as it is done with all polarity symmetric loads). Note that under off-conditions (IIN = IIS = 0) the power
transistor is not activated. This results in raised power dissipation due to the higher voltage drop across the
intrinsic drain-source diode. The temperature protection is not active during reverse current operation! To
reduce the power dissipation at the integrated R
bb resistor an input resistor is recommended as described
on page 9.




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