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BTS660P Datasheet(PDF) 6 Page - Infineon Technologies AG

Part No. BTS660P
Description  Smart Highside High Current Power Switch
Download  16 Pages
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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 6 page
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Data Sheet BTS660P
Parameter and Conditions
Symbol
Values
Unit
at Tj = -40 ... +150 °C, Vbb = 24 V unless otherwise specified
min
typ
max
Infineon Technologies AG
Page 6
2003-Oct-01
Diagnostic Characteristics
Current sense ratio,
IL = 80 A,Tj =-40°C:
static on-condition,
Tj =25°C:
kILIS = IL : IIS,
Tj =150°C:
VON < 1.5 V
19),
IL = 20 A,Tj =-40°C:
VIS <VOUT - 5 v,
Tj =25°C:
VbIN > 4.0 V
Tj =150°C:
see diagram on page 12
IL = 10 A,Tj =-40°C:
Tj =25°C:
Tj =150°C:
IL = 4 A,Tj =-40°C:
Tj =25°C:
Tj =150°C:
kILIS
11 400
11 400
11 000
11 000
11 000
11 000
10 500
10 500
11 000
9 000
10 000
10 800
13 000
13 000
13 000
13 000
13 000
13 000
13 000
13 000
13 000
13 000
13 000
13 000
15 400
14 600
14 200
16 000
15 000
14 500
17 000
15 500
15 000
22 000
18 500
16 000
IIN = 0, I
IS=0 (e.g. during deenergizing of inductive loads):
--
--
--
Sense current saturation
IIS,lim
6.5
--
--
mA
Current sense leakage current
IIN = 0
VIN = 0, IL
< 0:
IIS(LL)
IIS(LH)
--
--
--
2
0.5
65
µA
Current sense over voltage protection
Tj =-40°C:
Ibb = 15 mA
Tj = 25...+150°C:
VbIS(Z)
68
70
--
72
--
--
V
Current sense settling time 20)
ts(IS)
--
--
500
µs
Input
Input and operating current (see diagram page 13)
IN grounded (VIN = 0)
IIN(on)
--
0.8
1.5
mA
Input current for turn-off
21)
IIN(off)
--
--
80
µA
19
)
If VON is higher, the sense current is no longer proportional to the load current due to sense current
saturation, see
IIS,lim .
20
)
not subject to production test, specified by design
21
)
We recommend the resistance between IN and GND to be less than 0.5
k
for turn-on and more than
500
k
for turn-off. Consider that when the device is switched off (IIN =0) the voltage between IN and GND
reaches almost Vbb.




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