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BTS660P Datasheet(PDF) 3 Page - Infineon Technologies AG

Part No. BTS660P
Description  Smart Highside High Current Power Switch
Download  16 Pages
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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 3 page
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Data Sheet BTS660P
Infineon Technologies AG
Page 3
2003-Oct-01
Thermal Characteristics
Parameter and Conditions
Symbol
Values
Unit
min
typ
max
Thermal resistance
chip - case:
RthJC7)
--
--
0.75
K/W
junction - ambient (free air):
RthJA
--
60
--
SMD version, device on PCB
8):
--
33
--
Electrical Characteristics
Parameter and Conditions
Symbol
Values
Unit
at Tj = -40 ... +150 °C, Vbb = 24 V unless otherwise specified
min
typ
max
Load Switching Capabilities and Characteristics
On-state resistance (Tab to pins 1,2,6,7, see
measurement circuit page 7)
IL = 20 A, Tj = 25 °C:
VIN = 0, IL = 20 A, Tj = 150 °C:
RON
--
7.2
14.6
9
17
m
IL = 80 A, Tj = 150 °C:
--
17
Vbb =6V, IL =20A, Tj =150°C: RON(Static)
17
22
Nominal load current
9) (Tab to pins 1,2,6,7)
ISO 10483-1/6.7: VON = 0.5 V, Tc = 85 °C
10
)
IL(ISO)
38
44
--
A
Nominal load current 9), device on PCB 8)
TA = 85 °C, Tj
≤ 150 °C V
ON
≤ 0.5 V,
IL(NOM)
9.9
11.1
--
A
Maximum load current in resistive range
(Tab to pins 1,2,6,7)
VON = 1.8 V, Tc = 25 °C:
see diagram on page 13
VON = 1.8 V, Tc = 150 °C:
IL(Max)
185
105
--
--
--
--
A
Turn-on time
11)
IIN
to 90% VOUT:
Turn-off time
IIN
to 10% VOUT:
RL = 1
, Tj =-40...+150°C
ton
toff
50
30
--
--
400
110
µs
Slew rate on 11) (10 to 30% VOUT )
RL = 1
dV/dton
1.0
1.5
2.2
V/
µs
Slew rate off 11) (70 to 40% VOUT )
RL = 1
-dV/dtoff
1.1
1.9
2.6
V/
µs
7
)
Thermal resistance RthCH case to heatsink (about 0.5 ... 0.9 K/W with silicone paste) not included!
8
)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2 (one layer, 70
µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
9
)
not subject to production test, specified by design
10
)
TJ is about 105°C under these conditions.
11
)
See timing diagram on page 14.




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