SN65HVD485E

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SLLS612E – JUNE 2004 – REVISED DECEMBER 2015

7.4 Thermal Information

SN65HVD485E

D

DGK

P

UNIT

(SOIC)

(VSSOP)

(PDIP)

8 PINS

8 PINS

8 PINS

127

180

153

°C/W

Junction-to-case (top) thermal resistance

51.4

66

40.5

°C/W

Junction-to-board thermal resistance

47.6

108

28.5

°C/W

Junction-to-top characterization parameter

7.9

4.6

17.6

°C/W

Junction-to-board characterization parameter

47

73.1

28.3

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report (SPRA953).

(2)

See the Package Thermal Characterization Methodologies application note (SZZA003) for an explanation of this parameter.

7.5 Electrical Characteristics: Driver

over recommended operating conditions (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MAX

UNIT

3

4.3

Differential output voltage

1.5

2.3

V

1.5

Change in magnitude of differential output

See Figure 3 and Figure 4

–0.2

0

0.2

V

voltage

Steady-state common-mode output voltage

See Figure 5

1

2.6

3

V

Change in steady-state common-mode output

–0.1

0

0.1

V

voltage

Common-mode output voltage

See Figure 5

500

mV

High-impedance output current

See receiver input currents

μA

Input current

D, DE

–100

100

μA

Short-circuit output current

–7 V

–250

250

mA

(1)

All typical values are at 25°C and with a 5-V supply.

7.6 Electrical Characteristics: Receiver

over recommended operating conditions (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MAX

UNIT

Positive-going input threshold voltage

–85

–10

mV

Negative-going input threshold voltage

–200

–115

mV

30

mV

High-level output voltage

4

4.6

V

Low-level output voltage

0.15

0.4

V

High-impedance-state output current

–1

1

μA

0.5

0.5

Bus input current

mA

–0.4

–0.4

High-level input current (RE)

–60

–30

μA

Low-level input current (RE)

–60

–30

μA

Differential input capacitance

7

pF

(1)

All typical values are at 25°C and with a 5-V supply.

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