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Q67060-S6307-A5 Datasheet(PDF) 10 Page - Infineon Technologies AG |
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Q67060-S6307-A5 Datasheet(HTML) 10 Page - Infineon Technologies AG |
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10 / 15 page  BTS 640 S2 Semiconductor Group Page 10 2003-Oct-01 Vbb disconnect with charged external inductive load PROFET V ST IS OUT GND bb 6 2 4 3 5 IN OUT 1 7 V bb high D R L L If other external inductive loads L are connected to the PROFET, additional elements like D are necessary. Inductive Load switch-off energy dissipation PROFET IN ST OUT GND Vbb = E E E EAS bb L R ELoad IS 1 2 5 3 4 6 7 OUT Vbb Energy stored in load inductance: EL = 1/2·L·I 2 L While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= VON(CL)·iL(t) dt, with an approximate solution for RL > 0 Ω: EAS= IL· L 2·RL · (Vbb + |VOUT(CL)|)· ln (1+ IL·RL |VOUT(CL)| ) |
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