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BAV102 Datasheet(PDF) 1 Page - Shunye Enterprise |
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BAV102 Datasheet(HTML) 1 Page - Shunye Enterprise |
1 / 3 page 3.4 +0.3 -0.1 0.4±0.1 Cathode indification FEATURES ◇ Silicon epitaxial planar diode ◇ High speed switching diode ◇ 500 mW power dissipation MECHANICAL DATA ◇ Case: MINI-MELF,glass case ◇ Polarity: Color band denotes cathode ◇ Weight: Approx 0.031 grams Ratings at 25℃,ambient temperature unless otherwise specified. Reverse voltage VR V Repetitive peak reverse voltage VRRM V Forward current I(AV) A Forward surge current tp=1s IFSM A Power dissipation PV mW Thermal resistance junction to ambient RθJA K/W Thermal resistance junction to lead RθJL K/W Junction temperature Tj ℃ Storage temperature range TSTG ℃ 250 BAV100---BAV103 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.25 350 500 1) - 65 --- + 175 BAV102 ABSOLUTE MAXIMUM RATINGS AND THERMAL RESISTANCE Unit 200 60 50 150 BAV101 100 120 SMALL SIGNAL SWITCHING DIODE BAV100 1.0 175 500 BAV103 200 MINI-MELF 1) Device mounted on PC board 50mm×50mm×1.6mm . Reverse Voltage - 50 to 200 Volts Forward Current - 250 mApere www.shunyegroup.com.cn |
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