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BTS6143D Datasheet(PDF) 10 Page - Infineon Technologies AG

Part No. BTS6143D
Description  Smart Highside Power Switch
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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 10 page
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Data sheet BTS 6143 D
Infineon Technologies AG
10 of 16
2003-Oct-01
Reversave
ï›› (Reverse battery protection)
Logic
IN
IS
R
OUT
L
R
Power GND
Signal GND
Vbb
-
Power
Transistor
IN
R
bb
R
D
RIS typ. 1 kΩ. Add RIN for reverse battery protection in
applications with Vbb above 16V;
recommended value:
=
+
IS
IN
R
R
1
1
V
V
A
bb
12
|
|
08
.
0
−
To minimise power dissipation at reverse battery
operation, the overall current into the IN and IS pin
should be about 80mA. The current can be provided by
using a small signal diode D in parallel to the input
switch, by using a MOSFET input switch or by proper
adjusting the current through RIS.
Since the current via Rbb generates additional heat in
the device, this has to be taken into account in the
overall thermal consideration.
Inverse load current operation
PROFET
V
IN
OUT
IS
bb
Vbb
VOUT
- IL
R IS
V
IS
V
IN
+
-
+
-
IIS
The device can be operated in inverse load current
mode (VOUT > Vbb > 0V). The current sense feature is
not available during this kind of operation (IIS = 0). In
case of inverse operation the intrinsic drain source
diode is eventually conducting resulting in considerably
increased power dissipation.
The transition from inverse to forward mode can result
in a delayed switch on.
Note: Temperature protection during inverse load
current operation is not possible!
Vbb disconnect with energised inductive
load
Provide a current path with load current capability by
using a diode, a Z-diode, or a varistor. (VZL+VD<39 V if
RIN = 0). For higher clamp voltages currents at IN and
IS have to be limited to 120 mA.
Version a:
PROFET
V
IN
OUT
IS
bb
V
bb
V
ZL
V
D




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