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BUZ325 Datasheet(PDF) 6 Page - Infineon Technologies AG |
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BUZ325 Datasheet(HTML) 6 Page - Infineon Technologies AG |
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6 / 9 page  Semiconductor Group 6 07/96 BUZ 325 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 0 4 8 12 16 V 22 V DS 0 2 4 6 8 10 12 14 16 18 20 22 24 A 28 I D V GS [V] a a 4.0 b b 4.5 c c 5.0 d d 5.5 e e 6.0 f f 6.5 g g 7.0 h h 7.5 i i 8.0 j j 9.0 k k 10.0 l Ptot = 125W l 20.0 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS 0 4 8 12 16 20 A 26 I D 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Ω 1.1 R DS (on) VGS [V] = a 4.0 VGS [V] = a a 4.5 b b 5.0 c c 5.5 d d 6.0 e e 6.5 f f 7.0 g g 7.5 h h 8.0 i i 9.0 j j 10.0 k k 20.0 Typ. transfer characteristics ID = f (VGS) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 0 1 2 3 4 5 6 7 8 V 10 V GS 0 2 4 6 8 10 12 14 16 18 A 22 \SYMBOL.ID\ Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 0 2 4 6 8 10 12 14 16 A 20 I D 0 1 2 3 4 5 6 7 8 9 10 11 12 13 S 15 g fs |
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