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CFY25-20P Datasheet(PDF) 3 Page - Infineon Technologies AG |
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CFY25-20P Datasheet(HTML) 3 Page - Infineon Technologies AG |
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3 / 8 page  CFY25 Semiconductor Group 3 of 8 Draft D, Sep. 0000 Electrical Characteristics (at TA=25°C; unless otherwise specified) Parameter Symbol Values Unit min. typ. max. DC Characteristics Drain-source saturation current VDS = 3 V, VGS = 0 V IDss 15 30 60 mA Gate threshold voltage VDS = 3 V, ID = 1 mA -VGth 0.3 1.0 3.0 V Drain current at pinch-off VDS = 3 V, VGS = - 4 V IDp - < 100 - µA Gate leakage current at pinch-off VDS = 3 V, VGS = - 4 V -IGp - < 100 200 µA Transconductance VDS = 3 V, ID = 15 mA gm15 35 40 - mS Gate leakage current at operation VDS = 3 V, ID = 15 mA -IG15 - < 1 2 µA Thermal resistance junction to soldering point Rth JS - 370 - K/W |
Similar Part No. - CFY25-20P |
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Similar Description - CFY25-20P |
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