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STH320N4F6-6 Datasheet(PDF) 4 Page - STMicroelectronics |
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STH320N4F6-6 Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 19 page Electrical characteristics STH320N4F6-2, STH320N4F6-6 4/19 Doc ID 024221 Rev 1 2 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage (VGS= 0) ID = 250 µA 40 V IDSS Zero gate voltage drain current (VGS = 0) VDS = 40 V, VDS = 40 V, TC=125 °C 1 100 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ± 20 V ± 100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 24 V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 80 A 1.1 1.3 m Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 15 V, f = 1 MHz, VGS =0 - 13800 1870 1095 - pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD= 20 V, ID= 160 A, VGS= 10 V (see Figure 14) - 240 59 75.2 - nC nC nC Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD = 20 V, ID = 80 A RG= 4.7 Ω, VGS= 10 V, (see Figure 13) - 28 98 - ns ns td(off) tf Turn-off delay time Fall time - 190 95 - ns ns |
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