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HYB18L128160BF-75 Datasheet(PDF) 7 Page - Infineon Technologies AG

Part # HYB18L128160BF-75
Description  DRAMs for Mobile Applications
Download  53 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

HYB18L128160BF-75 Datasheet(HTML) 7 Page - Infineon Technologies AG

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HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
Overview
Data Sheet
7
V1.4, 2004-04-30
1
Overview
1.1
Features
•
4 banks
× 2 Mbit × 16 organization
•
Fully synchronous to positive clock edge
•
Four internal banks for concurrent operation
•
Programmable CAS latency: 2, 3
•
Programmable burst length: 1, 2, 4, 8 or full page
•
Programmable wrap sequence: sequential or interleaved
•
Programmable drive strength
•
Auto refresh and self refresh modes
•
4096 refresh cycles / 64 ms
•
Auto precharge
•
Commerical (0°C to +70°C) and Extended (-25
oC to +85oC) operating temperature range
•
54-ball P-VFBGA package (12.0
× 8.0 × 1.0 mm)
Power Saving Features
•
Low supply voltages:
V
DD = 1.8 V ± 0.15 V, VDDQ = 1.8 V ± 0.15 V
•
Optimized self refresh (
I
DD6) and standby currents (IDD2/IDD3)
•
Programmable Partial Array Self Refresh (PASR)
•
Temperature Compensated Self-Refresh (TCSR), controlled by on-chip temperature sensor
•
Power-Down and Deep Power Down modes
Table 1
Performance
Part Number Speed Code
- 7.5
Unit
Speed Grade
133
MHz
Access Time (
t
ACmax)
CL = 3
5.4
ns
CL = 2
6.0
ns
Clock Cycle Time (
t
CKmin)
CL = 3
7.5
ns
CL = 2
9.5
ns
Table 2
Memory Addressing Scheme
Item
Addresses
Banks
BA0, BA1
Rows
A0 - A11
Columns
A0 - A8


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