HYB18T1G160AF datasheet(10/89 Pages) INFINEON

Part #	HYB18T1G160AF

Description	1 Gbit DDR2 SDRAM

Download	89 Pages

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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10 / 89 page

Page 10

Rev. 1.02

May 2004

INFINEON Technologies

HYB18T1G400/800/160AF

1Gb DDR2 SDRAM

1.6 Block Diagrams

Block Diagram 64Mbit x 4 I/O x 4 Internal Memory Banks,

(128 Mbit x 4 Organisation with 14 Row, 3 Bank and 12 Column External Addresses)

2

DQS

CK, CK

DLL

RAS

CAS

CK

CS

WE

CK

Column-Address

Counter/Latch

Mode

11

A0-A13,

BA0-BA2

CKE

17

I/O Gating

DM Mask Logic

Bank0

Memory

Array

(16384 x 512 x 16)

Sense Amplifiers

Bank0

Bank1

Bank7

17

9

2

4

Input

Register

1

16

4

16

Data

Mask

Data

CK,

COL0,1

DQS

Generator

1

4

16

DQ0-DQ3,

DM

DQS

Write

FIFO

&

Drivers

Column

Decoder

512

(x16)

Registers

16384

CK

4

DQS

1

4

AP

17

8

Note: This Functional Block Diagram is intended to facilitate user understanding of the operation of

the device; it does not represent an actual circuit implementation.

Note: DM is a unidirectional signal (input only), but is internally loaded to match the load of the bidi-

rectional DQ and DQS signals.

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HYB18T1G160AF Datasheet(PDF) 10 Page - Infineon Technologies AG

HYB18T1G160AF Datasheet(HTML) 10 Page - Infineon Technologies AG

Similar Part No. - HYB18T1G160AF

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