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TPD3E001DRLRG4 Datasheet(PDF) 5 Page - Texas Instruments |
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TPD3E001DRLRG4 Datasheet(HTML) 5 Page - Texas Instruments |
5 / 22 page 1 10 100 1000 –40 25 45 65 85 Temperature(°C) 0.00 1.00 2.00 2.50 3.00 4.00 5.00 IO Voltage (V) 1.00 1.20 1.40 1.60 1.80 2.00 2.20 TPD3E001 www.ti.com SLLS683F – JULY 2006 – REVISED OCTOBER 2015 6.5 Electrical Characteristics VCC = 5 V ± 10%, TA = -40°c to 85°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT VCC Supply voltage 0.9 5.5 V ICC Supply current 1 100 nA VF Diode forward voltage IF = 10 mA 0.65 0.95 V VBR Breakdown Voltage IBR = 10mA 11 V Positive transients VCC + 25 TA = 25°C, ±15-kV HBM, IF = 10 A Negative transients –25 TA = 25°C, Positive transients VCC + 60 ±8-kV Contact Discharge VC Channel clamp voltage(2) V Negative transients –60 (IEC 61000-4-2), IF = 24 A TA = 25°C, Positive transients VCC + 100 ±15-kV Air-Gap Discharge Negative transients –100 (IEC 61000-4-2), IF = 45 A Ii/o Channel leakage current Vi/o = GND or VCC ±1 nA Cio Channel input capacitance VCC = 5 V, bias of VCC/2 1.5 pF Ii/o = 1 A, between IO pin and Rdyn Dynamic resistance 1.2 Ω ground (1) Typical values are at VCC = 5 V and TA = 25°C. (2) Channel clamp voltage is not production tested. 6.6 Typical Characteristics VCC = 5.0 V VCC = 5.5 V Figure 1. IO Capacitance vs IO Voltage Figure 2. IO Leakage Current vs Temperature Copyright © 2006–2015, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Links: TPD3E001 |
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