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HYB25L128160AC-75 Datasheet(PDF) 7 Page - Infineon Technologies AG |
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HYB25L128160AC-75 Datasheet(HTML) 7 Page - Infineon Technologies AG |
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7 / 50 page  HYB/E 25L128160AC 128-MBit Mobile-RAM INFINEON Technologies 7 2003-02 Operation Definition All of SDRAM operations are defined by states of control signals CS, RAS, CAS, WE, and DQMx at the positive edge of the clock. The following list shows the truth table for the operation commands. Notes: 1. V = Valid, x = Don’t Care, L = Low Level, H = High Level. 2. CKEn signal is input level when commands are provided, CKEn-1 signal is input level one clock before the commands are provided. 3. This is the state of the banks designated by BA0, BA1 signals. 4. Power Down Mode can not entry in the burst cycle. Address Input for Mode Set (Mode Register Operation) 5. After Deep Power Down mode exit a full new initialisation of the memory device is mandatory. 2SHUDWLRQ Device State CKE n-1 CKE n DQM BA0 BA1 AP= A10 Addr CS RAS CAS WE Bank Active Idle 3 H XXVVV L L H H Bank Precharge Any H X X V L X L L H L Precharge All Any H X X X H X L L H L Write Active 3 H XXV L V L H L L Write with Autoprecharge Active 3 H XXV H V L H L L Read Active 3 H X X V L V LH LH Read with Autoprecharge Active 3 H X X V H V LH LH Mode Register Set Idle H XXVVV LLLL No Operation Any H XXXXX L H H H Burst Stop Active H XXXXX L H H L Device Deselect Any H XXXXX H XXX Auto Refresh Idle H H XXXX L L L H Self Refresh Entry Idle H L XXXX L L L H Self Refresh Exit Idle (Self Refr.) L H XXXX H XXX LH H X Power Down Entry (Precharge or active standby) Idle H L XXXX H XXX Active 4 L HHH Power Down Exit Any (Power Down) L H XXXX H XXX LH H L Data Write/Output Enable Active H X L XXXXXXX Data Write/Output Disable Active H X H XXXXXXX Deep Power Down Entry Idle H L XXXX L H H L Deep Power Down Exit Deep 5 Power Down L H XXXXXXXX |
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