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SCT20N120 Datasheet(PDF) 1 Page - STMicroelectronics

Part # SCT20N120
Description  Very high operating temperature capability
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

SCT20N120 Datasheet(HTML) 1 Page - STMicroelectronics

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This is information on a product in full production.
December 2015
DocID026413 Rev 4
1/13
13
SCT20N120
Silicon carbide Power MOSFET:
20 A, 1200 V, 189 m
Ω (typ., TJ=150 °C), N-channel in a HiP247™
Datasheet
- production data
Figure 1. Internal schematic diagram
Features
• Very tight variation of on-resistance vs.
temperature
• Slight variation of switching losses vs.
temperature
• Very high operating temperature capability
(200 °C)
• Very fast and robust intrinsic body diode
• Low capacitance
• Easy to drive
Applications
Solar inverters, UPS
Motor drives
High voltage DC-DC converters
Switch mode power supplies
Description
This silicon carbide Power MOSFET is produced
exploiting the advanced, innovative properties of
wide bandgap materials. This results in
unsurpassed on-resistance per unit area and very
good switching performance almost independent
of temperature. The outstanding thermal
properties of the SiC material, combined with the
device’s housing in the proprietary HiP247™
package, allows designers to use an industry-
standard outline with significantly improved
thermal capability. These features render the
device perfectly suitable for high-efficiency and
high power density applications.
Note:
The device meets ECOPACK standards, an environmentally-friendly grade of products
commonly referred to as “halogen-free”. See Section 4: Package mechanical data.
1
2
3
HiP247™
Table 1. Device summary
Order code
Marking
Package
Packaging
SCT20N120
SCT20N120
HiP247™
Tube
www.st.com


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