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SCT20N120 Datasheet(PDF) 1 Page - STMicroelectronics |
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SCT20N120 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 13 page This is information on a product in full production. December 2015 DocID026413 Rev 4 1/13 13 SCT20N120 Silicon carbide Power MOSFET: 20 A, 1200 V, 189 m Ω (typ., TJ=150 °C), N-channel in a HiP247™ Datasheet - production data Figure 1. Internal schematic diagram Features • Very tight variation of on-resistance vs. temperature • Slight variation of switching losses vs. temperature • Very high operating temperature capability (200 °C) • Very fast and robust intrinsic body diode • Low capacitance • Easy to drive Applications • Solar inverters, UPS • Motor drives • High voltage DC-DC converters • Switch mode power supplies Description This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247™ package, allows designers to use an industry- standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications. Note: The device meets ECOPACK standards, an environmentally-friendly grade of products commonly referred to as “halogen-free”. See Section 4: Package mechanical data. 1 2 3 HiP247™ Table 1. Device summary Order code Marking Package Packaging SCT20N120 SCT20N120 HiP247™ Tube www.st.com |
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