ISO3080, ISO3082, ISO3086, ISO3088

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SLOS581H – MAY 2008 – REVISED DECEMBER 2015

7 Specifications

7.1 Absolute Maximum Ratings

(1)

MIN

MAX

UNIT

–0.3

6

V

Voltage at any bus I/O terminal

–9

14

V

Voltage input, transient pulse, A, B, Y, and Z (through 100

Ω, see Figure 20)

–50

50

V

Voltage input at any D, DE or RE terminal

–0.5

7

V

Receiver output current

±10

mA

Maximum junction temperature

150

°C

Storage temperature

–65

150

°C

(1)

Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating

conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltage values except differential I/O bus voltages are with respect to network ground terminal and are peak voltage values

7.2 ESD Ratings

VALUE

UNIT

Bus pins and GND1

±6000

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all

Bus pins and GND2

±12000

V

Electrostatic discharge

All pins

±4000

Charged device model (CDM), per JEDEC specification JESD22-

All pins

±1000

V

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

MIN

TYP

MAX

UNIT

3.15

5.5

V

4.5

5

5.5

V

Voltage at either bus I/O terminal

A, B

–7

12

V

High-level input voltage

2

VCC

D, DE, RE

V

Low-level input voltage

0

0.8

A with respect to B

–12

12

Differential input voltage

V

Dynamic (ISO3086)

see Figure 9

Differential input resistance

54

60

Ω

Driver

–60

60

Output current

mA

Receiver

–8

8

Ambient temperature

–40

85

°C

(1)

7.4 Thermal Information

ISO308x

DW

UNIT

16 PINS

168

Junction-to-ambient thermal resistance

°C/W

High-K thermal resistance

79.6

Junction-to-case (top) thermal resistance

39.7

°C/W

Junction-to-board thermal resistance

44.7

°C/W

Junction-to-top characterization parameter

11.8

°C/W

Junction-to-board characterization parameter

44.0

°C/W

Junction-to-case (bottom) thermal resistance

n/a

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

(2)

Tested in accordance with the Low-K or High-K thermal metric definitions of EIA/JESD51-3 for leaded surface mount packages.

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