DocID15200 Rev3

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SPT01-335DEE

Characteristics

2

Characteristics

Pin #

Name

Description

Exposed pad aligned with pins 1 and 6

LS

D1 Power bus protection diode cathode

1, 6

HS

D1 Power bus protection diode anode

5, Exposed pad aligned with pins 2

and 5

V+

D2 sensor switch protection diode cathode;

pin 5 internally connected to mid pad

2

V-

D2 sensor switch protection diode anode

Exposed pad aligned with pins 3 and 4

K

D3 reverse blocking protection diode cathode

3, 4

A

D3 reverse blocking protection diode anode

Symbol Diode

Parameter

Value

Unit

All

1. See system oriented test circuits in Figure 11 (ESD) and Figure 10 (Surge as also described

in

IEC 60947-5-2).

15

kV

ESD protection, IEC 61000-4-2, per diode, in contact (1)

8kV

All

Peak Surge Voltage, IEC 61000-4-5, per diode,

(1)

1kV

All

2

A

All

100

W

All

1

A

D1

Maximum repetitive avalanche energy

(1)

60

mJ

All

Storage junction temperature range

- 40 to 175

°C

Table 3. Recommended operating conditions

Symbol

Parameter

Value

Unit

Operating power bus supply voltage

-30 to 36

V

-30 to 35

V

300

mA

Operating ambient temperature range

-40 to 100

°C

1. Extended from DC operating at 150 °C up to peak repetitive value during the inductive load

demagnetization

-40 to 175

°C