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HYE18L128160BC-7.5 Datasheet(PDF) 4 Page - Infineon Technologies AG

Part # HYE18L128160BC-7.5
Description  BJAWBMSpecialty DRAMs Mobile-RAM
Download  6 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

HYE18L128160BC-7.5 Datasheet(HTML) 4 Page - Infineon Technologies AG

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MANUF A CTURERS ARE CHALLENGED to lower core and I/O voltage in order to further reduce power
consumption. Compared with the 2.5 V technology previously in use, Infineon’s next-generation 1.8 V technology meets
these demands by cutting power consumption by approximately 40 %.
THE MARKET IS ALSO CALLING for a reduction in harmful substances, the elimination of lead in chips
and easier recycling. Infineon is one of the first manufacturers to offer Mobile-RAM chips in green packages.
IN ANTICIP A TION OF RISING demand for cost-optimized multi-chip solutions, (combining flash and
Mobile-RAM) Infineon will also soon be introducing a pre-tested Known Good Die (KGD) / wafer solution.
AND T O REDUCE PO WER consumption even further, Infineon plans to switch its Mobile-RAM devices from
SDR to DDR speeds. Due to be launched in the near future. For more details, please contact your local sales representative.
Ahead of the Trend
Industry-wide Standard
INFINEON W ORKED CL OSEL Y with its industry partners to standardize the low-power features and
54-ball FBGA package for Mobile-RAM through JEDEC (Joint Electron Device Engineering Council), the semiconductor
engineering standardization body of EIA (Electronic Industry Alliance). Information on controller and ASIC vendors that
support the new Mobile-RAM feature set standard is available on request.
FOR THE L A TEST INFORMA TION and datasheet updates on Mobile-RAM, visit our website at
www.infineon.com/memory/Mobile-RAM
Voltage
conversion
Trend towards
green package
Trend towards
KGD
Trend towards
DDR
Source: IFX
2003
DDR
SDR
3.3 V
2004
2005
1.8 V
2.5 V
Known Good Die
BGA
TSOP
FGBA


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