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HYE18L128160BC-7.5 Datasheet(PDF) 4 Page - Infineon Technologies AG |
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HYE18L128160BC-7.5 Datasheet(HTML) 4 Page - Infineon Technologies AG |
4 / 6 page MANUF A CTURERS ARE CHALLENGED to lower core and I/O voltage in order to further reduce power consumption. Compared with the 2.5 V technology previously in use, Infineon’s next-generation 1.8 V technology meets these demands by cutting power consumption by approximately 40 %. THE MARKET IS ALSO CALLING for a reduction in harmful substances, the elimination of lead in chips and easier recycling. Infineon is one of the first manufacturers to offer Mobile-RAM chips in green packages. IN ANTICIP A TION OF RISING demand for cost-optimized multi-chip solutions, (combining flash and Mobile-RAM) Infineon will also soon be introducing a pre-tested Known Good Die (KGD) / wafer solution. AND T O REDUCE PO WER consumption even further, Infineon plans to switch its Mobile-RAM devices from SDR to DDR speeds. Due to be launched in the near future. For more details, please contact your local sales representative. Ahead of the Trend Industry-wide Standard INFINEON W ORKED CL OSEL Y with its industry partners to standardize the low-power features and 54-ball FBGA package for Mobile-RAM through JEDEC (Joint Electron Device Engineering Council), the semiconductor engineering standardization body of EIA (Electronic Industry Alliance). Information on controller and ASIC vendors that support the new Mobile-RAM feature set standard is available on request. FOR THE L A TEST INFORMA TION and datasheet updates on Mobile-RAM, visit our website at www.infineon.com/memory/Mobile-RAM Voltage conversion Trend towards green package Trend towards KGD Trend towards DDR Source: IFX 2003 DDR SDR 3.3 V 2004 2005 1.8 V 2.5 V Known Good Die BGA TSOP FGBA |
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