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STFU28N65M2 Datasheet(PDF) 7 Page - STMicroelectronics |
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STFU28N65M2 Datasheet(HTML) 7 Page - STMicroelectronics |
7 / 12 page STFU28N65M2 Electrical characteristics DocID027607 Rev 3 7/12 Figure 8: Static drain-source on-resistance Figure 9: Normalized on-resistance vs. temperature Figure 10: Gate charge vs gate-source voltage Figure 11: Capacitance variations Figure 12: Output capacitance stored energy Figure 13: Source-drain diode forward characteristics GIPG031220141344MT RDS(on) 0.148 0.146 0.144 0 4 ID(A) ( Ω) 0.150 VGS=10V 8 0.152 0.154 0.156 16 12 0.158 RDS(on) 1 -75 -25 75 Tj(°C) 25 (norm) 0.2 125 0.6 1.4 1.8 2.2 VGS= 10V GIPD180920141459FSR GIPG031220141340MT VGS 6 4 2 0 0 10 Qg(nC) (V) 8 10 VDD=520V ID=20 A 12 100 0 200 VDS VDS (V) 300 400 20 30 40 500 C 1000 100 10 1 0.1 10 VDS(V) (pF) 1 100 Ciss Coss Crss 10000 GIPG031220141347MT Eoss 4 2 0 0 100 VDS(V) (µJ) 400 200 300 6 500 8 10 600 GIPG051220141243MT GIPG031220141421MT VSD 0 8 ISD(A) (V) 4 20 12 16 0.5 0.6 0.7 TJ=-50°C TJ=150°C TJ=25°C 0.8 0.9 1 |
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