HYR16xx49G

64MB & 128MB Rambus RIMM Modules

INFINEON Technologies

9

9.01

1)

The table below shows the number of 288 Mbit RDRAM devices contained in a RIMM module of

listed memory storage capacity

.

Absolute Maximum Ratings

Symbo

l

Parameter

Limit Values

Unit

min.

max.

V

I,ABS

Voltage applied to any RSL or CMOS signal pad with

respect to GND

– 0.3

V

V

V

DD,ABS

Voltage on

V

– 0.5

V

V

T

STORE

Storage temperature

– 50

100

°C

DC Recommended Electrical Conditions

Symbol Parameter and Conditions

Limit Values

Unit

min.

max.

V

DD

Supply voltage

2.50 – 0.13

2.50 + 0.13

V

V

CMOS

CMOS I/O power supply at pad for

2.5 V controllers:

CMOS I/O power supply at pad for

1.8 V controllers:

2.5 – 0.13

1.8 – 0.1

2.5 + 0.25

1.8 + 0.2

V

V

V

REF

Reference voltage

1.4 – 0.2

1.4 + 0.2

V

V

IL

RSL input low voltage

V

V

V

V

IH

RSL input high voltage

V

V

V

V

IL,CMOS

CMOS input low voltage

– 0.3

0.5

V

V

V

IH,CMOS

CMOS input high voltage

0.5

V

V

V

V

OL,CMOS

CMOS output low voltage @

I

–

0.3

V

V

OH,CMOS

CMOS output high voltage @

I

V

–

V

I

REF

V

– 10

× no.

RDRAMs

1)

10

× no.

RDRAMs

1)

µA

I

SCK,CMD

CMOS input leakage current @

(0

– 10

× no.

RDRAMs

1)

10

× no.

RDRAMs

1)

µA

I

SIN,SOUT

CMOS input leakage current @

(0

– 10.0

10.0

µA

RIMM Module Capacity

64MB

128 MB

Number of 288 Mbit RDRAM devices

2

4