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HYB25D256800BTL-5 Datasheet(PDF) 11 Page - Infineon Technologies AG |
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HYB25D256800BTL-5 Datasheet(HTML) 11 Page - Infineon Technologies AG |
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11 / 83 page  HYB25D256[400/800/160]B[T/C](L) 256-Mbit Double Data Rate SDRAM Pin Configuration Data Sheet 11 Rev. 1.2, 2004-02 02102004-TSR1-4ZWW Table 3 Input/Output Functional Description Symbol Type Function CK, CK Input Clock: CK and CK are differential clock inputs. All address and control input signals are sampled on the crossing of the positive edge of CK and negative edge of CK. Output (read) data is referenced to the crossings of CK and CK (both directions of crossing). CKE Input Clock Enable: CKE HIGH activates, and CKE Low deactivates, internal clock signals and device input buffers and output drivers. Taking CKE Low provides Precharge Power-Down and Self Refresh operation (all banks idle), or Active Power-Down (row Active in any bank). CKE is synchronous for power down entry and exit, and for self refresh entry. CKE is asynchronous for self refresh exit. CKE must be maintained high throughout read and write accesses. Input buffers, excluding CK, CK and CKE are disabled during power-down. Input buffers, excluding CKE, are disabled during self refresh. CS Input Chip Select: All commands are masked when CS is registered HIGH. CS provides for external bank selection on systems with multiple banks. CS is considered part of the command code. The standard pinout includes one CS pin. RAS, CAS, WE Input Command Inputs: RAS, CAS and WE (along with CS) define the command being entered. DM Input Input Data Mask: DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH coincident with that input data during a Write access. DM is sampled on both edges of DQS. Although DM pins are input only, the DM loading matches the DQ and DQS loading. BA0, BA1 Input Bank Address Inputs: BA0 and BA1 define to which bank an Active, Read, Write or Precharge command is being applied. BA0 and BA1 also determines if the mode register or extended mode register is to be accessed during a MRS or EMRS cycle. A0 – A12 Input Address Inputs: Provide the row address for Active commands, and the column address and Auto Precharge bit for Read/Write commands, to select one location out of the memory array in the respective bank. A10 is sampled during a Precharge command to determine whether the Precharge applies to one bank (A10 LOW) or all banks (A10 HIGH). If only one bank is to be precharged, the bank is selected by BA0, BA1. The address inputs also provide the op-code during a Mode Register Set command. DQ Input/Output Data Input/Output: Data bus. DQS Input/Output Data Strobe: Output with read data, input with write data. Edge-aligned with read data, centered in write data. Used to capture write data. NC – No Connect: No internal electrical connection is present. V DDQ Supply DQ Power Supply: 2.5 V ± 0.2 V/ 2.6V ± 0.1V. V SSQ Supply DQ Ground V DD Supply Power Supply: 2.5 V ± 0.2 V / 2.6V ± 0.1V V SS Supply Ground V REF Supply SSTL_2 reference voltage: (V DDQ / 2) |
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Similar Description - HYB25D256800BTL-5 |
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