HYS 64/72V32300GU

SDRAM-Modules

INFINEON Technologies

6

9.01

Operating Currents per SDRAM Component

1)

T

Parameter

Test

Condition

Symbol

-7.5

-8

Unit Note

max.

Operating current

t

Outputs open, Burst Length = 4, CL = 3

All banks operated in random access,

all banks operated in ping-pong manner

to maximize gapless data access

–

I

CC1

230

170

mA

2)

Precharge stand-by current

in Power Down Mode

CS =

V

t

I

CC2P

22mA

2)

Precharge Stand-by Current

in Non-Power Down Mode

CS =

V

t

I

CC2N

40

30

mA

2)

No operating current

t

active state (max. 4 banks)

CKE

IH(MIN.)

I

CC3N

50

45

mA

2)

CKE

IL(MAX.)

I

CC3P

10

10

mA

2)

Burst operating current

t

Read command cycling

–

I

CC4

150

100

mA

2), 3)

Auto refresh current

t

Auto Refresh command cycling

–

I

CC5

240

220

mA

2)

Self refresh current

Self Refresh Mode, CKE = 0.2 V

I

CC6

33mA

2)

1. All values are shown per one SDRAM component.

2. These parameters depend on the cycle rate. These values are measured at 133 MHz operation frequency

for -7 & -7.5 and at 100 MHz for -8 modules.

Input signals are changed once during t

3. These parameters are measured with continuous data stream during read access and all DQ toggling.

CL = 3 and BL = 4 are assumed and the data-out current is excluded.