HYS72V16300GU-8-C2 datasheet(10/20 Pages) INFINEON

Part #	HYS72V16300GU-8-C2

Description	3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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HYS 64/72V16300/32220GU

SDRAM-Modules

INFINEON Technologies

10

9.01

CAS to CAS Delay Time

(same bank)

t

CCD

1

–

1

–

1

–

CLK

–

Refresh Cycle

Refresh Period (4096 cycles)

t

REF

–

64

–

64

–

64

ms

Self-Refresh Exit Time

t

SREX

1

–

1

–

1

–

CLK

10)

Read Cycle

Data Out Hold Time

t

OH

3

–

3

–

3

–

ns

4)

Data Out to Low Impedance

t

LZ

0

–

0

–

0

–

ns

–

Data Out to High Impedance

t

HZ

373

738ns

11

DQM Data Out Disable

Latency

t

DQZ

–

2

–

2

–

2CLK

–

Write Cycle

Data Input to Precharge

(write recovery)

t

WR

2

–

2

–

2

–

CLK

–

DQM Write Mask Latency

t

DQW

0

–

0

–

0

–

CLK

–

AC Characteristics (cont’d)

3), 4)

T

A = 0 to 70 °C; VSS =0V; VDD =3.3 V ±0.3 V, tT =1ns

Parameter

Symbol

Limit Values

Unit

Note

-7

PC133-222

-7.5

PC133-333

-8

PC100-222

min.

max.

min.

max. min.

max.

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HYS72V16300GU-8-C2 Datasheet(PDF) 10 Page - Infineon Technologies AG

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