AUIRGP35B60PD-E datasheet(2/11 Pages) IRF

Part #	AUIRGP35B60PD-E

Description	WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE

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Manufacturer	IRF [International Rectifier]

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AUIRGP35B60PD-E

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Notes:

RCE(on) typ. = equivalent on-resistance = VCE(on) typ./ IC, where VCE(on) typ.= 1.85V and IC =22A. ID (FET Equivalent) is the equivalent MOSFET ID

rating @ 25°C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.

VCC = 80% (VCES), VGE = 20V, L = 28 µH, RG = 22 Ω.

Pulse width limited by max. junction temperature.

Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06.

Coes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES.

Coes eff.(ER) is a fixed capacitance that stores the same energy as Coes while VCE is rising from 0 to 80% VCES.

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min.

Typ. Max. Units

Conditions

Ref.Fig

V(BR)CES

Collector-to-Emitter Breakdown Voltage

600

—

V

VGE = 0V, IC = 500µA

∆V(BR)CES/∆TJ

Temperature Coeff. of Breakdown Voltage

—0.78

—

V/°C VGE = 0V, IC = 1mA (25°C-125°C)

RG

Internal Gate Resistance

—

1.7

—

Ω

1MHz, Open Collector

—1.85

2.15

IC = 22A, VGE = 15V

4, 5,6,8,9

VCE(on)

Collector-to-Emitter Saturation Voltage

—

2.25

2.55

V

IC = 35A, VGE = 15V

—2.37

2.80

IC = 22A, VGE = 15V, TJ = 125°C

—3.00

3.45

IC = 35A, VGE = 15V, TJ = 125°C

VGE(th)

Gate Threshold Voltage

3.0

4.0

5.0

V

IC = 250µA

7,8,9

∆VGE(th)/∆TJ

Threshold Voltage temp. coefficient

—

-10

—

mV/°C VCE = VGE, IC = 1.0mA

gfe

Forward Transconductance

—

36

—

S

VCE = 50V, IC = 22A, PW = 80µs

ICES

Collector-to-Emitter Leakage Current

—

3.0

375

µA

VGE = 0V, VCE = 600V

—0.35

—

mA VGE = 0V, VCE = 600V, TJ = 125°C

VFM

Diode Forward Voltage Drop

—

1.30

1.70

V

IF = 15A, VGE = 0V

10

—1.20

1.60

IF = 15A, VGE = 0V, TJ = 125°C

IGES

Gate-to-Emitter Leakage Current

—

±100

nA

VGE = ±20V, VCE = 0V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min.

Typ. Max. Units

Ref.Fig

Qg

Total Gate Charge (turn-on)

—

160

240

IC = 22A

17

Qgc

Gate-to-Collector Charge (turn-on)

—

55

83

nC VCC = 400V

CT1

Qge

Gate-to-Emitter Charge (turn-on)

—

21

32

VGE = 15V

Eon

Turn-On Switching Loss

—

220

270

IC = 22A, VCC = 390V

CT3

Eoff

Turn-Off Switching Loss

—

215

265

µJ

VGE = +15V, RG = 3.3

Ω, L = 200µH

Etotal

Total Switching Loss

—

435

535

TJ = 25°C f

td(on)

Turn-On delay time

—

26

34

IC = 22A, VCC = 390V

CT3

tr

Rise time

—

6.0

8.0

ns

VGE = +15V, RG = 3.3Ω, L = 200µH

td(off)

Turn-Off delay time

—

110

122

TJ = 25°C fÃÃ

tf

Fall time

—

8.0

10

Eon

Turn-On Switching Loss

—

410

465

IC = 22A, VCC = 390V

CT3

Eoff

Turn-Off Switching Loss

—

330

405

µJ

VGE = +15V, RG = 3.3

Ω, L = 200µH

11,13

Etotal

Total Switching Loss

—

740

870

TJ = 125°C f

WF1,WF2

td(on)

Turn-On delay time

—

26

34

IC = 22A, VCC = 390V

CT3

tr

Rise time

—

8.0

11

ns

VGE = +15V, RG = 3.3Ω, L = 200µH

12,14

td(off)

Turn-Off delay time

—

130

150

TJ = 125°CÃfÃÃ

WF1,WF2

tf

Fall time

—

12

16

Cies

Input Capacitance

—

3715

—

VGE = 0V

16

Coes

Output Capacitance

—

265

—

VCC = 30V

Cres

Reverse Transfer Capacitance

—

47

—

pF

f = 1Mhz

Coes eff.

Effective Output Capacitance (Time Related)

g

—135

—

VGE = 0V, VCE = 0V to 480V

15

Coes eff. (ER) Effective Output Capacitance (Energy Related) g

—179

—

TJ = 150°C, IC = 120A

3

RBSOA

Reverse Bias Safe Operating Area

FULL SQUARE

VCC = 480V, Vp =600V

CT2

Rg = 22

Ω, VGE = +15V to 0V

trr

Diode Reverse Recovery Time

—

42

60

ns

TJ = 25°C

IF = 15A, VR = 200V,

19

—74

120

TJ = 125°C

di/dt = 200A/µs

Qrr

Diode Reverse Recovery Charge

—

80

180

nC TJ = 25°C

IF = 15A, VR = 200V,

21

—

220

600

TJ = 125°C

di/dt = 200A/µs

Irr

Peak Reverse Recovery Current

—

4.0

6.0

A

TJ = 25°C

IF = 15A, VR = 200V,

19,20,21,22

—6.5

10

TJ = 125°C

di/dt = 200A/µs

CT5

Conditions

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