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AUIRGP35B60PD-E Datasheet(PDF) 2 Page - International Rectifier |
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AUIRGP35B60PD-E Datasheet(HTML) 2 Page - International Rectifier |
2 / 11 page AUIRGP35B60PD-E 2 www.irf.com Notes: RCE(on) typ. = equivalent on-resistance = VCE(on) typ./ IC, where VCE(on) typ.= 1.85V and IC =22A. ID (FET Equivalent) is the equivalent MOSFET ID rating @ 25°C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions. VCC = 80% (VCES), VGE = 20V, L = 28 µH, RG = 22 Ω. Pulse width limited by max. junction temperature. Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06.
Coes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES. Coes eff.(ER) is a fixed capacitance that stores the same energy as Coes while VCE is rising from 0 to 80% VCES. Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 500µA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage —0.78 — V/°C VGE = 0V, IC = 1mA (25°C-125°C) RG Internal Gate Resistance — 1.7 — Ω 1MHz, Open Collector —1.85 2.15 IC = 22A, VGE = 15V 4, 5,6,8,9 VCE(on) Collector-to-Emitter Saturation Voltage — 2.25 2.55 V IC = 35A, VGE = 15V —2.37 2.80 IC = 22A, VGE = 15V, TJ = 125°C —3.00 3.45 IC = 35A, VGE = 15V, TJ = 125°C VGE(th) Gate Threshold Voltage 3.0 4.0 5.0 V IC = 250µA 7,8,9 ∆VGE(th)/∆TJ Threshold Voltage temp. coefficient — -10 — mV/°C VCE = VGE, IC = 1.0mA gfe Forward Transconductance — 36 — S VCE = 50V, IC = 22A, PW = 80µs ICES Collector-to-Emitter Leakage Current — 3.0 375 µA VGE = 0V, VCE = 600V —0.35 — mA VGE = 0V, VCE = 600V, TJ = 125°C VFM Diode Forward Voltage Drop — 1.30 1.70 V IF = 15A, VGE = 0V 10 —1.20 1.60 IF = 15A, VGE = 0V, TJ = 125°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V, VCE = 0V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Ref.Fig Qg Total Gate Charge (turn-on) — 160 240 IC = 22A 17 Qgc Gate-to-Collector Charge (turn-on) — 55 83 nC VCC = 400V CT1 Qge Gate-to-Emitter Charge (turn-on) — 21 32 VGE = 15V Eon Turn-On Switching Loss — 220 270 IC = 22A, VCC = 390V CT3 Eoff Turn-Off Switching Loss — 215 265 µJ VGE = +15V, RG = 3.3 Ω, L = 200µH Etotal Total Switching Loss — 435 535 TJ = 25°C f td(on) Turn-On delay time — 26 34 IC = 22A, VCC = 390V CT3 tr Rise time — 6.0 8.0 ns VGE = +15V, RG = 3.3Ω, L = 200µH td(off) Turn-Off delay time — 110 122 TJ = 25°C fÃÃ tf Fall time — 8.0 10 Eon Turn-On Switching Loss — 410 465 IC = 22A, VCC = 390V CT3 Eoff Turn-Off Switching Loss — 330 405 µJ VGE = +15V, RG = 3.3 Ω, L = 200µH 11,13 Etotal Total Switching Loss — 740 870 TJ = 125°C f WF1,WF2 td(on) Turn-On delay time — 26 34 IC = 22A, VCC = 390V CT3 tr Rise time — 8.0 11 ns VGE = +15V, RG = 3.3Ω, L = 200µH 12,14 td(off) Turn-Off delay time — 130 150 TJ = 125°CÃfÃÃ WF1,WF2 tf Fall time — 12 16 Cies Input Capacitance — 3715 — VGE = 0V 16 Coes Output Capacitance — 265 — VCC = 30V Cres Reverse Transfer Capacitance — 47 — pF f = 1Mhz Coes eff. Effective Output Capacitance (Time Related) g —135 — VGE = 0V, VCE = 0V to 480V 15 Coes eff. (ER) Effective Output Capacitance (Energy Related) g —179 — TJ = 150°C, IC = 120A 3 RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp =600V CT2 Rg = 22 Ω, VGE = +15V to 0V trr Diode Reverse Recovery Time — 42 60 ns TJ = 25°C IF = 15A, VR = 200V, 19 —74 120 TJ = 125°C di/dt = 200A/µs Qrr Diode Reverse Recovery Charge — 80 180 nC TJ = 25°C IF = 15A, VR = 200V, 21 — 220 600 TJ = 125°C di/dt = 200A/µs Irr Peak Reverse Recovery Current — 4.0 6.0 A TJ = 25°C IF = 15A, VR = 200V, 19,20,21,22 —6.5 10 TJ = 125°C di/dt = 200A/µs CT5 Conditions |
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