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AUIRGP66524D0 Datasheet(PDF) 2 Page - International Rectifier |
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AUIRGP66524D0 Datasheet(HTML) 2 Page - International Rectifier |
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2 / 13 page  AUIRGP/F66524D0 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 10, 2014 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 100µA V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 0.21 — V/°C VGE=0V, IC=20mA (25°C-175°C) — 1.60 1.90 IC = 24A, VGE = 15V, TJ = 25°C VCE(on) Collector-to-Emitter Saturation Voltage — 1.95 — V IC = 24A, VGE = 15V, TJ = 150°C — 2.0 — IC = 24A, VGE = 15V, TJ = 175°C VGE(th) Gate Threshold Voltage 5.5 6.5 7.5 V VCE = VGE, IC = 250µA VGE(th)/TJ Threshold Voltage temp. coefficient — -28 — mV/°C VCE=VGE, IC=1mA(25°C-175°C) gfe Forward Transconductance — 21 — S VCE = 50V, IC = 24A, PW = 20µs ICES Collector-to-Emitter Leakage Current — 1.1 50 µA VGE = 0V, VCE = 600V VFM Diode Forward Voltage Drop — 1.50 1.90 IF = 24A — 1.40 — IF = 24A, TJ = 175°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V V Thermal Resistance Parameter Typ. Max. Units RJC (IGBT) Thermal Resistance Junction-to-Case (each IGBT) ––– 0.7 RJC (Diode) Thermal Resistance Junction-to-Case (each Diode) ––– 1.1 RCS Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 ––– RJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 40 °C/W Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) — 50 80 nC IC = 24A Qge Gate-to-Emitter Charge (turn-on) — 16 24 VGE = 15V Qgc Gate-to-Collector Charge (turn-on) — 26 39 VCC = 400V Eon Turn-On Switching Loss — 915 1045 µJ Eoff Turn-Off Switching Loss — 280 395 Etotal Total Switching Loss — 1195 1440 IC = 24A, VCC = 400V, VGE = 15V td(on) Turn-On delay time — 30 50 ns RG = 10, L = 740µH, TJ = 25°C tr Rise time — 25 45 Energy losses include tail & diode td(off) Turn-Off delay time — 75 95 reverse recovery tf Fall time — 25 45 Eon Turn-On Switching Loss — 1280 — µJ Eoff Turn-Off Switching Loss — 550 — Etotal Total Switching Loss — 1830 — IC = 24A, VCC = 400V, VGE = 15V td(on) Turn-On delay time — 30 — ns RG = 10, L = 740µH, TJ = 175°C tr Rise time — 25 — Energy losses include tail & diode td(off) Turn-Off delay time — 100 — reverse recovery tf Fall time — 95 — Cies Input Capacitance — 1460 — pF VGE = 0V Coes Output Capacitance — 120 — VCC = 30V Cres Reverse Transfer Capacitance — 50 — f = 1.0Mhz TJ = 175°C, IC = 96A RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp ≤ 600V Rg = 10 , VGE = +20V to 0V SCSOA Short Circuit Safe Operating Area 6 — — TJ = 150°C, VCC = 400V, Vp ≤600V Rg = 50 , VGE = +15V to 0V Erec Reverse Recovery Energy of the Diode — 570 — µJ TJ = 175°C trr Diode Reverse Recovery Time — 176 — ns VCC = 400V, IF = 24A Irr Peak Reverse Recovery Current — 19 — A VGE = 15V, Rg = 10, L = 740µH µs Notes: VCC = 80% (VCES), VGE = 20V, L = 740µH, RG = 10. Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. R is measured at TJ approximately 90°C. |
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