IPI05N03LA datasheet(7/10 Pages) INFINEON

Part #	IPI05N03LA

Description	OptiMOS 2 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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7 / 10 page

IPB05N03LA

IPI05N03LA, IPP05N03LA

13 Avalanche characteristics

14 Typ. gate charge

I AS=f(t AV); R GS=25 Ω

V GS=f(Q gate); I D=40 A pulsed

parameter: Tj(start)

parameter: V DD

15 Drain-source breakdown voltage

16 Gate charge waveforms

V BR(DSS)=f(T j); I D=1 mA

5 V

15 V

20 V

0

2

4

6

8

10

12

0

1020

3040

Q gate [nC]

20

21

22

23

24

25

26

27

28

29

-60

-20

20

60

100

140

180

T j [°C]

V GS

Q gate

V gs(th)

Q g(th)

Q gs

Q gd

Q sw

Q g

25 °C

100 °C

150 °C

1

10

100

1

10

100

1000

t AV [µs]

Rev. 1.4

page 7

2004-03-23

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IPI05N03LA Datasheet(PDF) 7 Page - Infineon Technologies AG

IPI05N03LA Datasheet(HTML) 7 Page - Infineon Technologies AG

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