IPS04N03LA datasheet(3/11 Pages) INFINEON

Part #	IPS04N03LA

Description	OptiMOS 2 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPD04N03LA IPF04N03LA

IPS04N03LA IPU04N03LA

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

-

3909

5199

pF

Output capacitance

C oss

-

1488

1979

Reverse transfer capacitance

Crss

-

174

261

Turn-on delay time

t d(on)

-14

21

ns

Rise time

t r

-11

16

Turn-off delay time

t d(off)

-44

66

Fall time

t f

-

6.6

10

Gate Charge Characteristics

6)

Gate to source charge

Q gs

-12

16

nC

Gate charge at threshold

Q g(th)

-

6.3

8.3

Gate to drain charge

Q gd

-

8.1

12

Switching charge

Q sw

-14

19

Gate charge total

Q g

-31

41

Gate plateau voltage

V plateau

-

3.0

-

V

Gate charge total, sync. FET

Q g(sync)

V DS=0.1 V,

V GS=0 to 5 V

-28

37

nC

Output charge

Q oss

V DD=15 V, V GS=0 V

-32

43

Reverse Diode

Diode continous forward current

I S

-

50

A

Diode pulse current

I S,pulse

-

350

Diode forward voltage

V SD

V GS=0 V, I F=50 A,

T j=25 °C

-

0.89

1.2

V

Reverse recovery charge

Q rr

V R=15 V, I F=I S,

di F/dt =400 A/µs

-

15

nC

6) See figure 16 for gate charge parameter definition

T C=25 °C

Values

V GS=0 V, V DS=15 V,

f =1 MHz

V DD=15 V, V GS=10 V,

I D=25 A, R G=2.7 Ω

V DD=15 V, I D=25 A,

V GS=0 to 5 V

Rev. 1.8

page 3

2004-05-19

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IPS04N03LA Datasheet(PDF) 3 Page - Infineon Technologies AG

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