Electrical characteristics

STL19N65M5

4/17

DocID024984 Rev 1

2

Electrical characteristics

(T

C

= 25 °C unless otherwise specified)

Table 4. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V

(BR)DSS

Drain-source

breakdown voltage

(V

GS

= 0)

I

D

= 1 mA

650

V

I

DSS

Zero gate voltage

drain current (V

GS

= 0)

V

DS

= 650 V

V

DS

= 650 V, T

C

=125 °C

1

100

μA

μA

I

GSS

Gate-body leakage

current (V

DS

= 0)

V

GS

= ± 25 V

± 100

nA

V

GS(th)

Gate threshold voltage

V

DS

= V

GS

, I

D

= 250 μA

345

V

R

DS(on)

Static drain-source on-

resistance

V

GS

= 10 V, I

D

= 7.5 A

0.215

0.240

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

C

iss

Input capacitance

V

DS

= 100 V, f = 1 MHz,

V

GS

= 0

-

1240

-

pF

C

oss

Output capacitance

-

32

-

pF

C

rss

Reverse transfer

capacitance

-3

-

pF

C

o(er)

(1)

1.

C

oss eq.

time related is defined as a constant equivalent capacitance giving the same charging time as C

oss

when V

DS

increases from 0 to 80% V

DSS

Equivalent output

capacitance energy

related

V

GS

= 0,

V

DS

= 0 to 80% V

(BR)DSS

-30

-

pF

C

o(tr)

(2)

2.

C

oss eq.

energy related is defined as a constant equivalent capacitance giving the same stored energy as

C

oss

when V

DS

increases from 0 to 80% V

DSS

Equivalent

capacitance time

related

-99

-

pF

R

G

Intrinsic gate

resistance

f = 1 MHz open drain

-

3

-

Ω

Q

g

Total gate charge

V

DD

= 520 V, I

D

= 7.5 A,

V

GS

= 10 V

(see

Figure 16)

-31

-

nC

Q

gs

Gate-source charge

-

8

-

nC

Q

gd

Gate-drain charge

-

14

-

nC