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KSMU1N80 Datasheet(PDF) 1 Page - Kersemi Electronic Co., Ltd. |
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KSMU1N80 Datasheet(HTML) 1 Page - Kersemi Electronic Co., Ltd. |
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1 / 8 page  800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Kersemi proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. Features • 1.0A, 800V, RDS(on) = 20Ω @VGS = 10 V • Low gate charge ( typical 5.5nC) • Low Crss ( typical 2.7pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter KSMD1N80 / KSMU1N8 Units VDSS Drain-Source Voltage 800 V ID Drain Current - Continuous (TC = 25°C) 1.0 A - Continuous (TC = 100°C) 0.63 A IDM Drain Current - Pulsed (Note 1) 4.0 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 90 mJ IAR Avalanche Current (Note 1) 1.0 A EAR Repetitive Avalanche Energy (Note 1) 4.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns PD Power Dissipation (TA = 25°C) * 2.5 W Power Dissipation (TC = 25°C) 45 W - Derate above 25°C 0.36 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 2.78 °C/W RθJA Thermal Resistance, Junction-to-Ambient * -- 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 110 °C/W * When mounted on the minimum pad size recommended (PCB Mount) ! " ! ! ! " " " ! " ! ! ! " " " S D G TO-252 TO-251 KSMD1N80 / KSMU1N80 2014-7-16 1 www.kersemi.com |
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